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 PD - 94114
PROVISIONAL
SMPS MOSFET
IRFB42N20D IRFS42N20D IRFSL42N20D
HEXFET(R) Power MOSFET
Applications l High frequency DC-DC converters
VDSS
200V
RDS(on) max
0.055
ID
42.6A
Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) TO-220AB l Fully Characterized Avalanche Voltage IRFB42N20D and Current
D2Pak IRFS42N20D
TO-262 IRFSL42N20D
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TA = 25C PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw
Max.
42.6 30 170 3.8 300 2 30 TBD -55 to + 175 260 (1.6mm from case ) 10 lbf*in (1.1N*m)
Units
A W W/C V V/ns C
Typical SMPS Topologies
l
Telecom 48V input DC-DC Active Clamp Reset Forward Converter
Notes
through are on page 6
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1
03/05/01
IRFB/IRFS/IRFSL42N20D
Static @ TJ = 25C (unless otherwise specified)
Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. 200 --- --- 3.0 --- --- --- --- Typ. --- TBD --- --- --- --- --- ---
PROVISIONAL
Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.055 VGS = 10V, ID = 25.5A 5.5 V VDS = VGS, ID = 250A 25 VDS = 200V, VGS = 0V A 250 VDS = 160V, VGS = 0V, TJ = 150C 100 VGS = 30V nA -100 VGS = -30V
Dynamic @ TJ = 25C (unless otherwise specified)
gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. TBD --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 103 26 48 TBD TBD TBD TBD 3470 560 120 TBD TBD TBD Max. Units Conditions --- S VDS = 25V, ID = 25.5A --- ID = 25.5A --- nC VDS = 160V --- VGS = 10V --- VDD = 100V --- ID = 25.5A ns --- RG = TBD --- VGS = 10V --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 160V, = 1.0MHz --- VGS = 0V, VDS = 0V to 160V
Avalanche Characteristics
Parameter
EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy
Typ.
--- --- ---
Max.
TBD 25.5 30
Units
mJ A mJ
Thermal Resistance
Parameter
RJC RCS RJA RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Typ.
--- 0.50 --- ---
Max.
0.5 --- 62 40
Units
C/W
Diode Characteristics
Min. Typ. Max. Units IS
ISM
VSD trr Qrr ton
Conditions D MOSFET symbol --- --- 42.6 showing the A G integral reverse --- --- 170 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 25.5A, VGS = 0V --- TBD TBD ns TJ = 25C, IF = 25.5A --- 2.4 3.6 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
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PROVISIONAL
IRFB/IRFS/IRFSL42N20D
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
2 .8 7 (.1 1 3 ) 2 .6 2 (.1 0 3 )
1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 )
3 .7 8 (.1 4 9 ) 3 .5 4 (.1 3 9 ) -A6.4 7 (.2 5 5 ) 6.1 0 (.2 4 0 )
-B4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) 1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 )
4 1 5 .2 4 (.6 0 0 ) 1 4 .8 4 (.5 8 4 )
1 .1 5 (.0 4 5 ) M IN 1 2 3
L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - S OU RC E 4 - D R A IN
1 4 .0 9 (.5 5 5 ) 1 3 .4 7 (.5 3 0 )
4 .0 6 (.1 6 0 ) 3 .5 5 (.1 4 0 )
3X 3X 1 .4 0 (.0 5 5 ) 1 .1 5 (.0 4 5 )
0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) M BAM
3X
0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 )
0 .3 6 (.0 1 4 )
2 .5 4 (.1 0 0) 2X N O TE S : 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H
2 .9 2 (.1 1 5 ) 2 .6 4 (.1 0 4 )
3 O U T L IN E C O N F O R M S T O J E D E C O U T L IN E T O -2 2 0 A B . 4 H E A T S IN K & L E A D M E A S U R E M E N T S D O N O T IN C L U D E B U R R S .
TO-220AB Part Marking Information
E X A M P L E : T H IS IS A N IR F 1 0 1 0 W IT H A S S E M B L Y L O T C O D E 9 B 1M
A
IN T E R N A T IO N A L R E C T IF IE R LOGO ASSEM BLY LOT COD E
PART NU M BER IR F 1 0 1 0 9246 9B 1M
D ATE CO DE (Y Y W W ) YY = YEAR W W = W EEK
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3
IRFB/IRFS/IRFSL42N20D
D2Pak Package Outline
PROVISIONAL
1 0.54 (.415 ) 1 0.29 (.405 ) 1.4 0 (.055 ) M AX. -A2
4 .6 9 (.18 5) 4 .2 0 (.16 5)
-B1.3 2 (.05 2) 1.2 2 (.04 8)
10 .1 6 (.4 00 ) R E F.
6.47 (.2 55 ) 6.18 (.2 43 ) 1 5.49 (.6 10) 1 4.73 (.5 80) 5.28 (.2 08 ) 4.78 (.1 88 ) 2.7 9 (.110 ) 2.2 9 (.090 ) 2.61 (.1 03 ) 2.32 (.0 91 ) 1.3 9 (.0 55 ) 1.1 4 (.0 45 ) 8.8 9 (.3 50 ) R E F.
1.7 8 (.07 0) 1.2 7 (.05 0)
1
3
3X
1.40 (.0 55) 1.14 (.0 45) 3X 5 .08 (.20 0)
0.9 3 (.0 37 ) 0.6 9 (.0 27 ) 0.25 (.0 10 ) M BAM
0.55 (.0 22) 0.46 (.0 18)
M IN IM U M R EC O M M E ND E D F O O TP R IN T 1 1.43 (.4 50 )
NO TE S: 1 D IM EN S IO N S A FTER SO LD E R D IP . 2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 . 3 C O N TRO L LIN G D IM EN S IO N : IN C H. 4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
LE AD AS SIG N M E N TS 1 - G ATE 2 - D RA IN 3 - SO U R C E
8 .89 (.35 0) 17 .78 (.70 0)
3.81 (.1 5 0) 2.0 8 (.08 2) 2X 2.5 4 (.100 ) 2X
D2Pak Part Marking Information
IN TE R N A TIO N A L R E C T IF IE R LO G O A S S E M B LY LO T C O D E
PART NUM BER F530S 9 24 6 9B 1M
A
DATE CODE (Y YW W ) YY = Y E A R W W = W EEK
4
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PROVISIONAL
IRFB/IRFS/IRFSL42N20D
TO-262 Package Outline
TO-262 Part Marking Information
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5
IRFB/IRFS/IRFSL42N20D
D2Pak Tape & Reel Information
TRR
1 .6 0 (.0 6 3 ) 1 .5 0 (.0 5 9 ) 4 .1 0 (.1 6 1 ) 3 .9 0 (.1 5 3 )
PROVISIONAL
1 .6 0 (.0 6 3) 1 .5 0 (.0 5 9)
0.3 68 (.0 14 5 ) 0.3 42 (.0 13 5 )
F E E D D IRE CT IO N 1 .8 5 ( .0 7 3 )
1 .6 5 ( .0 6 5 )
1 1.6 0 (.4 57 ) 1 1.4 0 (.4 49 )
1 5.42 (.60 9) 1 5.22 (.60 1)
24 .3 0 (.9 57 ) 23 .9 0 (.9 41 )
TR L
10.9 0 (.4 29 ) 10.7 0 (.4 21 ) 1.7 5 (.06 9 ) 1.2 5 (.04 9 ) 1 6.10 (.63 4) 1 5.90 (.62 6) 4 .7 2 (.1 36 ) 4 .5 2 (.1 78 )
F E E D D IR E C TIO N
13.50 (.5 32) 12.80 (.5 04)
27.40 (1.079) 23.90 (.941)
4
330.00 (14.173) M AX .
60.00 (2.362) MIN .
N O TES : 1. C O MF O RM S TO EIA-418. 2. C O NT RO LL ING D IM EN SIO N: MIL LIM ETER . 3. D IM ENS IO N M EAS URE D @ HU B. 4. IN C LUD ES FL ANG E D ISTO R TIO N @ O U TER E DG E.
26.40 (1.039) 24.40 (.9 61)
30.40 (1.197) MA X. 4
3
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
Starting TJ = 25C, L = TBDmH
RG = TBD, I AS = 25.5A.
This is only applied to TO-220AB package T J 175C This is applied to D2Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. ISD 25.5A, di/dt TBDA/s, VDD V(BR)DSS,
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 9/00
6
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